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| '9 9 n ew ! MICROWAVE CORPORATION HMC223MS8 V01.0300 GaAS MMIC MSOP8 T/R SWITCH 4.5 - 6 GHz FEBRUARY 2001 Features INDUSTRY FIRST LOW COST 4.5-6 GHz SWITCH ULTRA SMALL PACKAGE: MSOP8 HIGH INPUT P1dB: +33 dBm SINGLE POSITIVE SUPPLY: +3 TO +8V General Description The HMC223MS8 is a low-cost SPDT switch in an 8-lead MSOP package for use in transmit-receive applications. The device can control signals from 4.5 to 6 GHz and is especially suited for 5.2 GHz UNII and 5.8 GHz ISM applications with only 1.2 dB loss. The design provides exceptional power handling performance; input P1dB = +33dBm at 5 Volt bias. RF1 or RF2 is a reflective short when "Off". On-chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. No DC blocking capacitors are required on RF I/O ports. HMC223MS8 is especially suited for PCMCIA wireless LAN applications. 7 SWITCHES Guaranteed Performance, Vdd = +5 Vdc, 50 Ohm System, -40 to +85 deg C Parameter Insertion Loss Frequency 4.5 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz 4.5 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz RF Common 4.5 - 6.0 GHz 5.1 - 5.9 GHz 4.5 - 6.0 GHz 5.1 - 5.9 GHz 4.5 - 6.0 GHz 4.5 - 6.0 GHz 4.5 - 6.0 GHz 4.5 - 6.0 GHz 4.5 - 6.0 GHz Min. Typ. 1.2 1.2 1.3 Max. Units 1.7 1.6 1.7 dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm nS nS SPDT Isolation 15 22 16 10 11 10 12 27 29 30 32 25 26 20 13 15 13 16 31 33 34 36 10 25 SMT Return Loss Input Power for 1dB Compression Input Third Order Intercept Switching Characteristics RF1 &RF2 0/3V C ontrol 0/5V C ontrol 0/3V C ontrol 0/5V C ontrol tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 88 '9 9 HMC223MS8 MICROWAVE CORPORATION ne w ! HMC223MS8 MSOP8 T/R SWITCH 4.5 - 6 GHz V01.0300 FEBRUARY 2001 Insertion Loss 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 -3.5 -4 3 4 5 FREQUENCY (GHz) 6 7 Isolation 0 -10 ISOLATION (dB) -20 -30 -40 3 4 5 FREQUENCY (GHz) 6 7 Return Loss 0 -5 RETURN LOSS (dB) S22 -10 -15 -20 -25 S11 RFC -30 3 4 5 FREQUENCY (GHz) 6 7 7 SWITCHES Fax: 978-250-3373 Web Site: www.hittite.com 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 7 - 89 SMT SPDT '9 9 n ew ! HMC223MS8 MICROWAVE CORPORATION HMC223MS8 MSOP8 T/R SWITCH 4.5 - 6 GHz FEBRUARY 2001 V01.0300 Functional Diagram RF2 GND GND RF1 Truth Table *Control Input Voltage Tolerances are 0.2 Vdc Bias Control Input * Vdd (Vdc) 3 3 3 5 5 A (Vdc) 0 0 Vdd 0 0 Vdd B (Vdc) 0 Vdd 0 0 Vdd 0 Bias Control Control Current Current Current Ivdd (A) 10 10 10 45 45 45 Ia (A) -5 -10 0 -22 -5 -40 Ib (A) -5 0 -10 -23 -40 -5 Signal Path State RF to RF1 OFF ON OFF OFF ON OFF RF to RF2 OFF OFF ON OFF OFF ON A B RF Vdd 5 Absolute Maximum Ratings Bias Voltage Range (Vdd) Control Voltage Range (A & B) Storage Temperature Operating Temperature -0.2 to +12 Vdc -0.2 to +Vdd Vdc -65 to +150 deg C -40 to +85 deg C Caution: Do not operate in 1dB compression at power levels above +33 dBm and do not 'hot switch' power levels greater than +23dBm (Vdd = +5Vdc). DC blocks are not required at ports RFC, RF1 and RF2. 7 SWITCHES Outline GND RF2 RF1 LOT NUMBER 0.116/0.120 (2.95/3.05) 0.116/0.120 (2.95/3.05) HMC 223 A B RF +Vdd 0.188/0.196 (4.78/4.98) XXXX YYWW DATE CODE YY= YEAR WW= WEEK PIN 1 (REF) SPDT PIN 1 0.038/0.042 (0.96/1.07) 0.032/0.036 (0.81/0.91) 0.005/0.007 (0.13/0.18) 0-5 DEG SMT 0.0256 TYP (0.65) 0.012 TYP (0.30) 1) 0.021 MIN TYP (0.53) 2. 3. MATERIAL: A) PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED B) LEADFRAME MATERIAL: COPPER ALLOY PLATING: LEAD-TIN SOLDER PLATE DIMENSIONS ARE IN INCHES (MILLIMETERS) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 90 '9 9 HMC223MS8 MICROWAVE CORPORATION ne w ! HMC223MS8 MSOP8 T/R SWITCH 4.5 - 6 GHz V01.0300 FEBRUARY 2001 Typical Application Circuit RF2 RF1 GND GND +V R1 A B Vdd +V R2 R3 CTL CMOS CMOS RF Notes: 1. Control inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface. 3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be placed close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances. 5. DC Blocking capacitors are not required for each RF port. 6. Evaluation PCB available. 7 SWITCHES SMT SPDT See Page 8 - 4 for Layout Guidelines Application Note. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 91 |
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